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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1763 DESCRIPTION *With TO-220Fa package *High breakdown voltage VCEO *Complement to type 2SB1186 *High transition frequency APPLICATIONS *For low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 120 120 5 2 3 20 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=1mA , IB=0 IC=50A , IE=0 IE=50A , IC=0 IC=1A ;IB=0.1A IC=1A ;IB=0.1A VCB=100V IE=0 VEB=4V; IC=0 IC=0.1A ; VCE=5V IE=-0.1A ; VCE=5V IE=0 ; VCB=10V ,f=1MHz 100 MIN 120 120 5 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT Cob 2SD1763 TYP. MAX UNIT V V V 0.4 1.5 1 1 320 80 20 V V A A MHz pF hFE Classifications E 100-200 F 160-320 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1763 Fig.2 Outline dimensions (unindicated tolerance:0.15 mm) 3 |
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